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| Detailed information |
| Original study plan |
Bachelor's programme Computer Science 2025W |
| Learning Outcomes |
Competences |
| Students can independently calculate simple electrical networks consisting of voltage sources, current sources, resistors, capacitors, diodes, and transistors (MOSFET). They know how digital gates made of MOSFETs are constructed. They can describe various memory technologies such as SRAM, DRAM and FLASH at the transistor level and know the advantages and disadvantages of each.
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| Skills |
Knowledge |
Students can:
- Use the physical quantities charge, current and voltage in simple calculations (K3)
- Calculate electrical circuits consisting of sources and passive elements using Ohm's and Kirchhoff's laws (K3)
- Use the non-linear components diode and transistor in circuits (K3)
- Realize logic gates from MOSFETs (K3)
- Represent memory (SRAM, DRAM, FLASH) at transistor level and name the respective advantages and disadvantages (K5)
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- Electric current (Ohm's law, charge, current, voltage)
- Electrical circuit (sources, Kirchhoff's laws)
- Resistor, capacitor
- Diode and transistor (MOSFET)
- Realization of digital gates using MOSFET
- Memory (SRAM, DRAM, FLASH)
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| Criteria for evaluation |
Written and/or oral exam at the end of the semester.
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| Methods |
Discussion of slides and interactive examples using blackboard.
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| Language |
German |
| Study material |
Study material is available for download.
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| Changing subject? |
No |
| Further information |
This lecture and the corresponding exercise form an inseparable didactic unit. The learning outcomes described here are achieved through the interaction of the two courses.
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| Corresponding lecture |
(*)INBPEVOTIN2: VO Technische Informatik 2 (3 ECTS)
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