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| Detailed information |
| Original study plan |
Master's programme Technical Physics 2013W |
| Objectives |
Introduction to the physics of the most important semiconductor devices
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| Subject |
- Survey of the most important semiconductor properties
Minority Carrier Devices:
- p/n-junction
- (hetero-)bipolar transistor
Minority Carrier devices are described in the drift-diffusion model with equivalent circuit, small signal and high-frequency behavior
Majoritv Carrier Devices:
- Schottky diode
- JFET und HEMT
- MOSFET, CMOSFET
Majority Carrier devices are described with their I-V characteristics and equivalent circuits
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| Criteria for evaluation |
oral exam
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| Methods |
blackboard, overhead and powerpoint viewgraphs,
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| Language |
German or English |
| Study material |
- S. M. Sze, Semiconductor Devices: Physics and Technology, John Wiley and Sons 2001
- S. M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, John Wiley and Sons 2006
- S. M. Sze, Modern Semiconductor Devices, John Wiley and Sons 1997
- R. Sauer, Halbleiterphysik: Lehrbuch für Physiker und Ingenieure, Oldenbourg 2009
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| Changing subject? |
No |
| Corresponding lecture |
(*)TPMWAVOHLBE: VO Halbleiterbauelemente (3 ECTS)
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