[ 461WEPHHLBV13 ] VL Semiconductor devices

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Workload Education level Study areas Responsible person Hours per week Coordinating university
3 ECTS M1 - Master's programme 1. year Physics Friedrich Schäffler 2 hpw Johannes Kepler University Linz
Detailed information
Original study plan Master's programme Technical Physics 2013W
Objectives Introduction to the physics of the most important semiconductor devices
  • Survey of the most important semiconductor properties

Minority Carrier Devices:

  • p/n-junction
  • (hetero-)bipolar transistor

Minority Carrier devices are described in the drift-diffusion model with equivalent circuit, small signal and high-frequency behavior
Majoritv Carrier Devices:

  • Schottky diode
  • JFET und HEMT

Majority Carrier devices are described with their I-V characteristics and equivalent circuits

Criteria for evaluation oral exam
Methods blackboard, overhead and powerpoint viewgraphs,
Language German or English
Study material
  • S. M. Sze, Semiconductor Devices: Physics and Technology, John Wiley and Sons 2001
  • S. M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, John Wiley and Sons 2006
  • S. M. Sze, Modern Semiconductor Devices, John Wiley and Sons 1997
  • R. Sauer, Halbleiterphysik: Lehrbuch für Physiker und Ingenieure, Oldenbourg 2009
Changing subject? No
Corresponding lecture (*)TPMWAVOHLBE: VO Halbleiterbauelemente (3 ECTS)
On-site course
Maximum number of participants -
Assignment procedure Direct assignment