| Detailed information | 
                    
                                
                    
                      | Original study plan | 
                      Master's programme Nanoscience and Technology 2014W | 
                    
                      
                    
                      | Objectives | 
                      To provide an overview of the fundamental concepts of crystal growth, starting from crystal-ambient phase equilibrium and diagrams, over the thermodynamics of nucleation and heading to the details of epitaxial growth.
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                      | Subject | 
                      Crystals lie at the root of today's advanced technology.    Near-perfect crystals of e.g. silicon and III-V compounds are needed for microprocessors and optoelectronics, magnetic crystals provide computer memories, and crystals with various specific properties are required for basic investigations and novel applications.
Topics: nucleation (thermodynamics, nucleation rate, atomistic view,…); crystal growth (facets, surface anisotropy, kinematic theory,…); epitaxial growth (thermodynamics, energy of epitaxial interfaces…); overview on main epitaxial techniques. 
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                      | Criteria for evaluation | 
                      Oral Exam, dates by arrangement.
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                      | Methods | 
                      Lecture
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                      | Language | 
                      (*)Englisch oder Deutsch | 
                    
                      
                    
                      | Study material | 
                      Script available.
Additional study material will be announced during the course
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                      | Changing subject? | 
                      No | 
                    
                                        
                      | Further information | 
                      Basic course for Master and PhD students interested in Nano- and Materials Science.
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                      | Corresponding lecture | 
                      (*)TPMWTVOKRWA: VO Kristallwachstum (3 ECTS) 
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