| Detailed information |
| Original study plan |
Master's programme Technical Physics 2016W |
| Objectives |
Based on the fundamentals of Semiconductor Physics, this lecture presents in depth selected topics, which are the basis for research and development in the area of semiconductor physics.
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| Subject |
Multiband k.p method for band structure calculation; Kane's model without spin-orbit; Kane's model with spin-orbit - effective mass of light particles; Luttinger-Kohn model with inclusion of remote bands; Effective mass of heavy and light holes; Effects of strain in semiconductors; definition of strain and stress tensors and general properties; Inclusion of strain effects in k.p model; Deformation potentials and Pikus-Bir Hamiltonian; Effects of biaxial strain - the case of lattice mismatched growth; Optical properties of semiconductors; Lorentz model, Kramers-Kronig relations and dielectric function; Dipole approximation for transition probabilities; absorption coefficient, refractive index, polarization selection rules and optical spin injection; Einstein's coefficients; Spontaneous emission and gain spectrum; Effective mass equation and its application to shallow donors, heterostructures and excitons.
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| Criteria for evaluation |
Oral exam
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| Methods |
Lectures are given using a tablet. Written material is distributed after the lectures
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| Language |
German or English |
| Study material |
Lecture notes, available after each lecture on KUSSS and recommended literature
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| Changing subject? |
No |
| Further information |
Contents slightly vary from year to year - Some of the topics will be treated more or less in depth.
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