| Detailed information |
| Original study plan |
Master's programme Technical Physics 2016W |
| Objectives |
Deepen the understanding of the material presented in the lecture through questions, analytic and numerical exercises as well as a laboratory experience.
|
| Subject |
Analytic and numerical exercises on the contents of the lecture; Experiment on temperature-dependent, strain-dependent and polarization-dependent photoluminescence of GaAs.
|
| Criteria for evaluation |
Solution of assigned problems, active participation to the exercise hours, written report on experiment including data analysis and interpretation.
|
| Methods |
Solution of assigned problems.
|
| Language |
German or English |
| Study material |
Lecture notes, available after each lecture on KUSSS and recommended literature
|
| Changing subject? |
No |
| Earlier variants |
They also cover the requirements of the curriculum (from - to)
TPMWTUEHPFO: UE Semiconductor physics for advanced students (2009W-2016S)
|
